Abstract
In this work, thin films of copper oxides obtained by arc deposition at low pressure on borosilicate glass were studied. The phase composition, structural characteristics and chemical state of the samples were confirmed by X-ray diffraction and X-ray photoelectron spectroscopy. Hall measurements using the van der Pauw method showed that films of both Cu2O and CuO phase compositions have hole conductivity (p-type). The concentration of charge carriers, mobility and resistivity of the samples were determined. In a thin film of mixed composition (Cu2O/CuO), the formation of a heterojunction was observed with a significant decrease in the concentration of charge carriers due to the recombination of electron-hole pairs. From UV-visible spectroscopy measurements, the absorption/transmission characteristics of the films are determined and the optical band gap is calculated. It has been shown that changing the phase composition of the oxide from Cu2O to CuO leads to a decrease in the band gap from 1.90 to 1.34 eV.
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