Abstract
Recently, various transient annealing technologies have been intensively invesigated on activation of ionimplanted layers, using laser, electron beam, flash lamp, high-intensity arc-lamp, and solar radiation. But the application of these annealing technologies to device processing is still in its infancy.This paper describes an application of halogen lamp annealing to the activation of ion-implanted silicon and to CMOS LSI processing.The samples were heated with halogen lamps in nitrogen gas at an atmospheric pressure to 1200 °C for five seconds. This annealing activated the boron ions and phosphorus ions implanted layers and realized the same sheet resistivities as the furnace annealing (100 °C, 20 min.) with negligible dopant redistribution. 256 K CMOS ROM was fabricated using the halogen lamp annealing.The advantage of halogen lamp annealing technology was shown in place of furnace annealing without changing conventional processing steps.
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