Abstract
Epitaxial thin films of La2CuSnO6 have been grown on (001)-oriented SrTiO3 substrates by a pulsed laser deposition method. The obtained films had the layered arrangement of Cu2+ and Sn4+ ions and also the 2-fold superstructure within the ab plane making a 2a×2a×2c tetragonal double-perovskite unit cell. Analysis of the interface between the La2CuSnO6 film and the SrTiO3 substrate has revealed that the first B-site cation of the prepared La2CuSnO6 film is Cu. We have also succeeded in controlling the Cu/Sn ordering in the perovskite structure by changing the deposition temperature. The dielectric constant of the layered thin film is as twice as that of the random film suggesting the large anisotropic dielectric property of La2CuSnO6.
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