Abstract
Thin films of Ga-In oxide (150 nm) have been deposited on glass substrate at room temperature by radio-frequency (rf) magnetron sputtering with two targets of Ga2O3 and metallic In, on which rf-powers of 150 W and 6080 W were added respectively. In the oxide films prepared by this method, the difference in the transmittance, Δ T, between the as-deposited state and the annealed state (400°C × 10 min) was more than 70% in the wavelength region of 350600 nm and at the wavelength of 320 nm, the value of ΔT of 42% was obtained. It was found from XRD spectra that (1) the In (101) peak was found in the as-deposited state (colored state) and (2) the In2O3 (222) peak was formed in the annealed state (transparent state). It was recognized from XPS measurement that the phase transition between the as-deposited state and the annealed state well corresponded to the transition of In (colored state) →In2O3 (transparent state). The ability to record on these oxide films without protection layer, using THG of Nd : YAG laser (δ=355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelenght region.
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