Abstract
The -turn coil having a width of on the GMR-SV (giant magnetoresistance-spin valve) device based on the antiferromagnetic IrMn layer was fabricated by using the optical lithography process. In the case of GMR-SV film and GMR-SV device, the magnetoresistance ratios and the magnetic sensitivities are 4.4%, 2.0%/Oe and 1.6 %, 0.1%/Oe, respectively. In the y-z plane the distribution of magnetic field of GMR-SV device and -turns coil which put under the several magnetic bead(MB)s with a diameter of attached to RBC (red blood cell) was analyzed by the computer simulation using the finite element method. When the AC currents of 20 kHz from 0.1 mA to 10.0 mA flow to the 10 turns -coil, the magnetic field at the position of $z
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