Abstract
Dislocations in silicon carbide (SiC) have been analyzed by means of double-crystal X-ray topography. Strain caused by a dislocation is sensitively observed by using the X-rays with small angular divergence. In this article, the authors describe the principle and method of the double-crystal X-ray topography, introduce SiC as a material developing for power electronics devices, and show practical observations of dislocations with high resolution.
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