Abstract
The radial distribution of mechanical stress, optical inhomogeneity and oxygen concentration in Sb-doped germanium crystals grown by the Czochralski method with diameter of 200 mm and resistivity from 10.5 to 18.5 Ω·cm were studied. It was found that residual stress calculated from the data of X-ray structural analysis correlates with results of numerical simulation of thermoelastic stress and interrelates with optical inhomogeneity and concentration of oxygen presented in the atomically dispersed state in germanium.
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