Abstract
금속급 실리콘(MG-Si)을 태양전지용 실리콘(SOG-Si)으로 정제하기 위한 경제적인 프로세스를 구축하기 위하여 1823 K에서 CaO-<TEX>$SiO_2$</TEX> 계 슬래그에 의한 붕소의 제거에 대하여 조사하였다. 본 연구에서 CaO-<TEX>$SiO_2$</TEX>와 <TEX>$CaCO_3-SiO_2$</TEX> 슬래그의 염기도(%CaO/<TEX>$%SiO_2$</TEX>) 증가에 따라 B의 제거율은 각각 63%와 73%까지 증가하였다. 그러나 Ar 가스에 의한 슬래그와 실리콘의 교반 시간의 영향은 나타나지 않았다. 그리고 CaO-<TEX>$SiO_2$</TEX> 계 슬래그에 <TEX>$Na_2CO_3$</TEX>를 첨가하였으나 그 영향은 크지 않았다. <TEX>$CaCO_3-SiO_2$</TEX> 슬래그(염기도=1.2)에 의해 3회 처리한 결과 B의 농도는 1.03 ppm까지 감소하였다. In order to develop economical production process from metallurgical grade silicon(MG-Si) to solar grade(SOG-Si), removal of boron by slag treatment was investigated at 1823 K using CaO-<TEX>$SiO_2$</TEX> based slags. In the present study boron removal ratio in CaO-<TEX>$SiO_2$</TEX> stags and <TEX>$CaCO_3-SiO_2$</TEX> slags were increased to 63% and 73% respectively with slag basicity (%CaO/<TEX>$%SiO_2$</TEX>). However, bubbling time with Ar gas of slag and metal was not affected on removal ratio of boron. The addition of <TEX>$Na_2CO_3$</TEX> to CaO-<TEX>$SiO_2$</TEX> slags did not improve the removal ratio of boron from molten silicon. Boron contend was decreased from 20.6 ppm to 1.03 ppm by three times treatment using <TEX>$CaCO_3-SiO_2$</TEX> slag (basicity=1.2).
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