Abstract
A study on rf sputtering plasma of Co, Gd pure metals and Gd26Co74 alloy with optical emission spectroscopy (OES) is performed under various discharge conditions such as argon pressure PAr, taget voltage Vrf and substrate bias voltage Vb. From the measurements of OES line intensities and deposition rates in various PAr, Vrf and focussing field H, it is found that the line intensity of both Co and Gd atoms is represented as a linear or square function of the atomic densities in the plasma. Moreover, the preferential resputtering effect of Gd atoms is also confirmed from the change of the line intensity under the condition of negative bias voltage | Vb | ≥20V.
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