Abstract
Recently, the use of Silicon-carbide Metal Oxide Semiconductor (SiC-MOSFET) with high frequency and low loss characteristics is increasing in power conversion systems. SiC-MOSFET is aged due to the kinetic energy of electrons and thermal stress. In this case, the aged SiC-MOSFET may not perform as expected and may cause a failure of the power conversion system. This can lead to personal injury and property damage, so it is very important to increase reliability by identifying and analysing the aging process of SiC-MOSFET. In this paper, changes in electrical characteristics due to SiC-MOSFET aging and changes in loss and efficiency of the power conversion system are verified through experiments and simulations. A high electric field aging methodology are used to accelerate the SiC-MOSFET aging. Thereafter, a change in loss occurring during device aging are measured through a double pulse test, and this is modeled. By applying the loss modeling result to a bidirectional DC-DC converter, loss changes and efficiency changes due to converter aging are analyzed to determine the effect of the SiC-MOSFET aging on the converter.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The transactions of The Korean Institute of Electrical Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
