Abstract
Within the scope of the Haldane – Anderson model metallic and ionic contri-butions to the adsorption energy are calculated for the Ga and Cl atoms ad-sorbed on the C- and Si-faces of p- and n-SiC substrates. It is shown firstly that for all considered cases we obtain that ionic contribution is greater than metallic contribution. Secondly, in the case of adsorption on the p-SiC sub-strate value of the model of adsorption energy for Ga is greater than for Cl while in the case of adsorption on the n-SiC opposite inequality is realized. For the description of the GaCl adsorption on SiC substrate simple ionic model is put forward. Comparison with the results of other authors demonstrates valid-ity of the proposed models.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Физика твердого тела
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
