Abstract
The method allowing to take into account the influence of the design peculiarities of a power thyristor on its dU/dt parameter is described. A simple model is proposed, that makes it possible to find the parameters of the auxiliary thyristor structure that belongs to the regenera-tive control gate and provides the given value of the thyristor dU/dt parameter. The minimum possible value of turn-on current of the thyristor, limited by a given value of the maximum rate of voltage rise, is found.
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