Abstract
We investigated the luminescence properties of <TEX>$Alq_3$</TEX> in the device structure of ITO/CuPc/TPD/<TEX>$Alq_3$</TEX>/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.
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