전착법을 이용한 CuInSe2박막태양전지 광활성층의 조성 조절

Abstract

Thin light-active layers of the <TEX>$CuInSe_2$</TEX> solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of <TEX>$CuInSe_2$</TEX> film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor <TEX>$CuInSe_2$</TEX> film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above <TEX>$500^{\circ}C$</TEX> induced crystallization of <TEX>$CuInSe_2$</TEX> with well-developed grains. The KCN-treatment of the annealed <TEX>$CuInSe_2$</TEX> films further induced Cu-poor <TEX>$CuInSe_2$</TEX> films without secondary phases, such as <TEX>$Cu_2Se$</TEX>. The structure, morphology, and composition of <TEX>$CuInSe_2$</TEX> films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality <TEX>$CuInSe_2$</TEX> films by electrodeposition were proposed.