Abstract
High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under <TEX>$1{\times}1mm^2$</TEX> diaphragm and Si membrane thickness of <TEX>$20{\mu}m$</TEX>. The pressure sensitivity of implemented pressure sensors was 0.1 mV/<TEX>$V{\cdot}bar$</TEX>. The nonlinearity and the hysteresis of sensors were <TEX>${\pm}0.44%{\cdot}FS$</TEX> and <TEX>$0.61%{\cdot}FS$</TEX>. In the temperature range of <TEX>$25^{\circ}C{\sim}400^{\circ}C$</TEX> with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperature coefficient of gauge factor) of the sensor were -1867 ppm/<TEX>$^{\circ}C$</TEX>, -792 ppm/<TEX>$^{\circ}C$</TEX>, and -1042 ppm/<TEX>$^{\circ}C$</TEX>, respectively.
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