Ａｒ‐Ｎ２混合ガスを用いた高周波 直流結合形マグネトロンスパッタ法による窒化マグネシウム薄膜の作製

Abstract

In an RF-DC coupled magnetron sputtering system, the magnetron discharge was generated by a 13.56 MHz RF source, and a DC power supply was simultaneously applied to the target. When a low RF power and DC bias are applied simultaneously to the Mg target, the glow discharge during Ar-N2 plasma takes place at a low DC bias and the target DC current increases smoothly compared with the DC mode magnetron case. MgNx films have been prepared at the gas flow ratio (N2/ (Ar+N2)) of 0.2 by an RF-DC coupled magnetron sputtering. It was shown that the MgNx films are obtained at the target bias VT=-100 V, where the compositional ratio (N/Mg) is 0.44.