Abstract
A crossed-anisotropy amorphous-film (CoFeB) MI element was deposited on a glass substrate by dc sputtering with two layers each 4.5 μm thick, applying a dc field of 270 Oe in a designed anisotropy direction. The MI element showed an asymmetrical MI effect when magnetized with a dc-biased ac current without any bias magnetic field. When the domain of the MI element was observed with a Kerr effect microscope, it was confirmed that the domain structure of the MI element became close to a single domain structure when a dc current was applied. The crossed-anisotropy film MI element induces spiral magnetic anisotropy when a dc current is applied.
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