耐熱性ファインセラミックスの接合に関する研究 第８報 Ｓｉ３Ｎ４と金属接合界面における反応層成長に関する速度論的検討

Abstract

Kinetics of the reaction layer growth in Si3N4-W brazed joints was investigated using Cu-5%Cr, Cu-I%Nb, Cu-3%V, Cu-5%Ti and Cu-10%Zr liquid insert metals. It was elucidated that the reaction layer growth could be expressed by Johnson-Mehl type equation with time exponent 'n' of 1/2. EPMA analysis of elements in the reaction layer revealed that Cr, Nb, V, Ti and Zr contents slightly decreased toward Si3N4, and that N content was almost constant. From the consideration of activation energy for reaction layer growth, it may be deduced that the reaction layer growth was controlled by diffusion of Cr, Nb, V, Ti and Zr in the reaction layer from the melted insert metal to Si3N4.