Abstract
A hollow cathode enhanced DC plasma oxidation system was developed. Using this system, thin Si oxide films of less than 15 nm thickness were grown on n-type Si (100) substrates for the application as barrier insulator of tunnel emitter. The oxide film thickness and the film quality were estimated by the elipsometery and the XPS energy peak shift of Si 2p core level, respectively.On the oxide film, thin Au electrode was deposited and MIS (Metal-Insulator-Semiconductor) diode type tunnel emitter was fabricated. The electrical properties of the diode, such as I-V characteristics and junction resistance were measured for various oxidation conditions.The electron emission current in vacuum from the tunnel emitter having 0.2 mm2 emission area was measured. For a typical sample, with diode voltage of 13 V, the measured current density is of the order of 10 μA/mm2.
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