Abstract
The authors fabricated semiconductive BaTiO3-In complex particles in the previous work. The aggregate of them could be a new FTC material, which can be used in arbitrary shapes, being different from the conventional rigid FTC materials. The interface between semiconductive BaTiO3 particles and indium particles plays an important role. In this work I-V characteristics of the interface are investigated in detail.The conclusions obtained in this research are as follows.(1) The existence of an indium thin plate at an interface between two semiconductive BaTiO3 particles drastically reduces electric resistance. This effect is ascribed to a good plasticity and a low value of the work function of the indium thin plate.(2) In-Ga eutectic liquid alloy and vacuum deposited indium film electrodes for a semiconductive BaTiO3 disc satisfy Ohm's law and does not form Schottky barrier.(3) Vacuum deposited gold film electrode forms a high electric resistance barrier at the interface. This high resistance may be caused by Schottky barrier.
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