Abstract
In this paper, we propose a new low-temperature growth technique for layered semiconductor GaSe film using an electron beam deposition apparatus with a grid electrode under the substrate. The grid electrode controlled the surface charge by the supplied voltage Vb between -30 V and + 30 V. The crystalline of the GaSe films were improved by the surface charge deposition at Vb= - 30 V and + 30V. The diffraction peak intensity of the GaSe film at Ts = 400°C with Vb = - 30 V was twice larger than that at Ts = 500°C without the surface charge deposition. The smoothing of the surface roughness and trapezoid like surface structure were also observed in the AFM images of the GaSe films at Vb = -30 V. Finally, it is noted that the surface charge deposition can develop the crystal growth of the GaSe films on a glass substrate at low substrate temperature.
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