Abstract
The arc ion plating (AIP) process uses a vacuum arc discharge with which almost all types of ceramic thin film can be formed. In this study, thin films of 40at% Ti-60at% Hf nitride were prepared on WC-Co substrates by AIP. The maximum microhardness obtained was Hv: 4000kgf/mm2. The crystal structure and orientation of the formed thin films were analyzed using X-ray diffraction (CuK α, 40kV-30mA). Reduced surface roughness and an increase deposition rate were studies as a function of nitrogen gas pressure.This process can be characterized by the high ionization rate of a metal vapor flux. Few studies have been made, however, on quantitatively assessing gas reactivity in a plasma process. The reaction probability of nitrogen gas in AIP was calculated from the viewpoint of metal-gas reaction kinetics, based on available data such as film deposition and nitrogen impingement rates on the substrate and compositional changes in films. The reaction probability (rN2=10-2) of nitrogen in Ti0.4Hf0.6N formation by AIP in this study was found to be equal to that in the hollow cathode discharge (HCD) process and higher than that in the activated reactive evaporation (ARE) by factors of three to ten.
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