Abstract
Highly c-axis oriented films of Mg-doped CuScO2 were successfully fabricated on α-Al2O3 (1120) substrates using a pulsed laser deposition method. X-ray pole figure analysis and RHEED observation showed that the films had twin boundaries. The electrical resistivity of the films was significantly decreased by oxygen radical annealing treatments. The lowest electrical resistivity at room temperature was 3.2 × 10-1 Ω·cm, and the temperature dependence showed semiconducting behavior. The p-type conductivity of the film was confirmed by the Seebeck measurement. The optical transmittance was greater than 60% in the visible/near-infrared region.
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