電気的に加工を制御した，機械，化学作用複合ポリシング法の研究

Abstract

Increasing packaging density of integrated circuits calls for silicon wafers with smaller surface micro-roughness. The surface micro-roughness of silicon wafers was conventionally improved by polishing with abrasive grains suspended in an alkaline water solution. The conventional method combines mechanical and chemical actions. When the electric charge of abrasive grains was high, however, the surface micro-roughness of silicon wafers could not be appreciably improved even if the size of abrasive grains was reduced. A new polishing method, called the Electrical-Mechanical-Chemical or EMC polishing method and designed to control the electrical action of abrasive grains by applying electrical charge to the silicon wafer was devised and tested. The test results showed that the EMC polishing method can provide wafers with satisfactory surface micro-roughness.