耐熱性ファインセラミックスの接合に関する研究 第７報 Ｓｉ３Ｎ４と金属接合部における反応層およびＣｕ富化層の形成現象

Abstract

Bonding of Si3N4 to W using Cu-5%Cr, Cu-1%Nb, Cu-3%V, Cu-5%Ti and Cu-10%Zr insert metals was conducted in a vacuum chamber. Thickness of the reaction layer formed at the interface between Si3N4 and insert layers was increased with increasing bonding temperature and holding time. SEM observation revealed that reaction layer grew toward the both sides of bonding interface. Growth of reaction layer toward the Cu enriched layer was attributed to the reaction between N and Cr, Nb, V, Ti or Zr, and that toward Si3N4 was attributed to the solid state reaction between Si3N4 and Cr, Nb, V, Ti or Zr in the reaction layer. Formation of Cu enriched layer was explained as a consequence of decrease in the contents of Cr, Nb, V, Ti and Zr in the melted insert metal by the reaction with Si3N4.