Abstract
Si-Ge elements and Mo electrodes were tried to braze with 4 kinds of Ti-base brazes. Aπ-shaped module used for thermoelectric generator was constructed from one couple of p and n-type Si-Ge elements and Mo electrodes. The maximum electrical power Pmax and the internal resistivity Rin of the modules were evaluated as a function of temperature difference between the hot side and cold side of the module. The module using TZCN braze (TZCN-module) showed the highest Pmax and the lowest Rin After annealing treatment at 700°C in vacuum for 5hr, the Rin of the TZCN-module was increased to 1.5-2 times of the initial value before annealing. After the first 5hr annealing, the Rin was found to be stable for 53hr. Before and after annealing treatment at 700°C in vacuum for 3hr, the optical and the X-ray images of Si-Ge/Mo joint section brazed with TZCN were not observed to be changed. We thought that the increase of Rin during the first 5hr annealing is due to the fine cracks between Si-Ge and brazing layer.
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