Abstract
Simulation of epitaxial growth is a unique technique available for understanding the growth kinetics in an atomic level. By use of Monte Carlo simulation, homoepitaxial growth of Si (100) is studied. The surface reconstruction of 2×1 is taken into account by introducing the dimer formation. The d mer formation and the accompanying dimer row formation play an inportant role in the growth, which give rise to the layer-by-layer fashion growth. The role of two different types of step during the growth is also studied in relation to the dimer row formation for the growth on a vicinal Si (100) surface.
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