Abstract
シリコン単結晶成長プロセスの数値シミュレーションに要求される熱物性値( バルク成長分科会特集-最先端デバイスと科学技術-)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Japanese Association for Crystal Growth
Paper Title
Journal
Date
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
