Abstract
シリコン単結晶成長プロセスの数値シミュレーションに要求される熱物性値( バルク成長分科会特集-最先端デバイスと科学技術-)
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Japanese Association for Crystal Growth
Paper Title
Journal
Date
