Abstract
thin film phosphors have been deposited using a pulsed laser deposition method on Si(100) substrates at a substrate temperature of with oxygen pressures of 100mTorr, and subsequently to investigate their photoluminescence characteristics after post-annealed at and . As a result for X-ray diffraction, shape appeared with increasing annealing temperature. The luminescent spectra show a broad band extending from 350 to 600nm peaking at 460nm. A post-annealing treatment of thin films led to the different shape of luminescent intensity and grain size.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
