Abstract
SnO is one of the most suitable gas sensor materials. The microstructure and surface morphology of films must be controlled because the electrical and optical properties of SnO films depend on these characteristics. The effects of chemical mechanical polishing(CMP) on the variation of morphology of SnO films prepared by RF sputtering system were investigated. The commercially developed ceria-based oxide slurry, silica-based oxide slurry, and alumina-based tungsten slurry were used as CMP slurry. Non-uniformities of all slurries met stability standards of less than 5 %. Silica slurry had the highest removal rate among three different slurries, sufficient thin film topographies and suitable root mean square(RMS) values.
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