Abstract
In this paper, we carried out the investigations of both etch characteristics and mechanisms for the thin films in plasma. The dry etching characteristics of the thin films was studied by varying the gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in
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