Abstract
Silicon dioxide (SiO<TEX>$_2$</TEX>) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO<TEX>$_2$</TEX> films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of <TEX>$O_2$</TEX> gas flow ratios from 0 to 200 1pm. This article presents the SiO<TEX>$_2$</TEX> gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO<TEX>$_2$</TEX> film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.
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