산화알루미늄 박막을 이용한 SiC MIS 구조의 제작 및 전기적 특성

Abstract

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at <TEX>$300^{\circ}C$</TEX> was about <TEX>$4.6{\times}10^{10}/cm^2\;eV$</TEX> in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about <TEX>$10^{-8}A/cm^2$</TEX> and about <TEX>$10^{-6}A/cm^2$</TEX> measured at room temperature and at <TEX>$300^{\circ}C$</TEX> for a <TEX>${\pm}1\;MV/cm$</TEX>, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.