Abstract
Abstract A new quantitative model of the negative-bias temperature instability (NBTI) of p -MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO_2 interphase boundary (IPB) and hydrogen-containing hole traps near the Si–SiO_2 IPB by positively charged hydrogen ions H^+, accumulated in the p ^+-type inversion layer of the silicon substrate. The dependences of the surface and space charges in p -MOS transistors on the NBTI time are controlled by the kinetics of H^+-ion diffusion and drift from the silicon substrate to the Si–SiO_2 IPB. The effect of the gate voltage on the NBTI is explained by the effect of the electric-field strength on the H^+ ion segregation coefficient at the Si–SiO_2 IPB. The relaxation of positive space charge introduced into the gate dielectric during NBTI is described by the tunnel discharge of oxide traps by silicon-substrate electrons.
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