Abstract
Recently, in the development of new device structures, structures with various metals on silicon have been used. Numerous studies have shown that as a result of solid-phase reactions of Mn and Si, it is possible to create heterophase systems from various manganese silicide. Such films possessing a unique set of thermoelectric properties. At the present time, obtaining a film with high values of a sufficient thermo-EMF, the maximum thermoelectric figure of merit of these materials of the pack has not yet been achieved. In this regard, there is a need for a detailed study of the structure and perfection of manganese silicide – silicon films obtained on a silicon substrate. In this work, we study the solid-phase reaction in the Mn-Si diffusion system and the process of the formation of manganese silicide phases on a silicon substrate.
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