Abstract
The effect of displacement defect due to radiation effect is investigated in laterally diffused metal oxide semiconductor (LDMOS) using technology computer-aided design (TCAD) simulation. The displacement defect with acceptor-like trap of deep level (Ec-0.4eV) under shallow trench isolation (STI) induces the worst degradation of Id-Vg characteristic. The location of defect under STI with lightly doping concentration is the worst position to transfer characteristic of Id-Vg. For breakdown voltage characteristic, the positions and types of displacement trap are negligible, because of high drain voltage operation.
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