Abstract
The electronic structure of the AlN surface and the ultrathin K/AlN interface was studied using in situ photoelectron spectroscopy under ultra-high vacuum conditions. Core level spectra from the N 1s, Al 2p and K 3p and from the valence band were studied for the clean AlN surface and for the K/AlN interface in the regime of K submonolayer coatings. During K adsorption, significant changes in all the spectra were found. Surface states in the valence band region below the EVBM were found. It was determined that the K/AlN interface has the semiconductor-like character.
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