산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성

Abstract

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at <TEX>$300^{\circ}C$</TEX> was about <TEX>$9\times10^{10}/cm^2$</TEX> eV in the upper bandgap. The gate leakage current densities of the MIS structures were about <TEX>$10^{-9}A/cm^2$</TEX> and about <TEX>$10^{-4}A/cm^2$</TEX> measured at room temperature and at <TEX>$300^{\circ}C$</TEX> for <TEX>$a{\pm}1MV/cm$</TEX>, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.