Емкостная спектроскопия гетероэпитакиальных AlGaAs/GaAs p-i-n-структур

Abstract

Temperature dependences of capacitance-voltage (C−V) characteristics and deep-level spectra of the graded highvoltage AlxGa1−xAs p0 −i−n0 junction grown by liquid-phase epitaxy via autodoping with background impurities were investigated. The changes of the C−V characteristics at varied measurement temperature and optical illumination demonstrated that the p0-, i-,n0-type layers in the AlxGa1−xAs under study contain bistable DX centers. In spectra of deep-level transient spectroscopy (DLTS), measured at various bias voltages Vr and filling pulses Vf , a positive DLTS peak is observed for the n 0 -type layer with thermal activation energy Et = 280 meV and electron-capture cross-section σn = 3.17 · 10−14 cm2, which is unusual for a majority-carrier trap. This peak is related to the negatively charged state of the Se/Te donor impurity, which is a bistable DX center with negative correlation energy U.