Abstract
Using spectral ellipsometry, Raman spectroscopy, and scanning microscopy with an X-ray spectrometer (EDS), the phenomenon of self-organized change in the composition of AlxGa1-xN epitaxial layers during their growth by chloride-hydride epitaxy (EDX) on SiC / Si (111) hybrid substrates was revealed. It was found that during the growth of AlxGa1-xN layers with a low, about 11-24% Al content, interlayers (domains) appear, consisting of AlGaN stoichiometric composition. A qualitative model has been proposed, according to which self-organization in composition arises due to the effect of two processes on the growth kinetics of the AlxGa1-xN film. The first process is associated with the competition of two chemical reactions proceeding at different rates. One of these reactions is the AlN formation reaction; the second is the reaction of GaN formation. The second process, closely related to the first, is the appearance of elastic compressive and tensile stresses during the growth of AlxGa1-xN films by the CGE method on SiC / Si (111). Both processes influence each other, which leads to a complex pattern of aperiodic changes in the composition over the thickness of the film layer. Keywords: A3B5 compounds, wide-gap semiconductors, AlGaN, AlN, GaN, silicon carbide on silicon, self-organization of the composition, HVPE method, solid solutions, heterostructures.
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