Abstract
Low frequency noise has been studied in power4H-SiC MOSFETs after proton(15 MeV) irradiation. The noise was studied at room temperature in the frequency range 1 Hz−50 kHz after irradiation with doses of 1012 ≤Ф≤ 6•1013 cm−2. Frequency dependence of the spectral noise density SI follows with good accuracy to the law SI∝1/f. The correlation between the saturation current of the output characteristics of Id(Vd) and the level of low-frequency noise is established. In the dose range Ф studied the value of the saturation current varies within about 20%, while the noise level changes by 2orders of magnitude. From the data of noise spectroscopy, the density of traps in the gate oxide, Ntv was estimated. In non-irradiated structures Ntv ≈5.4•1018cm−3•eV−1, at = 6•1013 cm−2, Ntv increases to a value of Ntv ≈7.2•1019cm−3•eV−1.
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