Abstract
A design of a 1.2 kV SiC MOSFET for reliable characteristics against process dispersion is presented. The profile of p-base concentration was designed in consideration of incomplete ionization and electric field crowding at the gate oxide. The structure of RA-JTE was optimized in consideration of surface charge density and critical dimension. The 1.2 kV SiC MOSFET with the optimized design parameters showed reliable characteristics against process dispersion.
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