Abstract
(Ti, Al)N films having various composition ratios of Ti and Al were deposited onto a hard alloy substrate by reactive RF sputtering using a single power source, the power from which was split by a variable coupling capacitor. A series of (Ti, Al)N specimens was obtained by changing voltage in a mixed argon-nitrogen atmosphere.Film composition were measured by X-ray diffraction and EPMA.The results showed that all the (Ti, Al)N films showed homogenous distribution of Ti and Al. X-ray patterns showed obvious formation of TiN for concentrated Ti side and AlN formation for Al riched side.Those (Ti, Al)N films having Ti-to-Al ratios approximating 1 1 were amorphous. Hardness of the films was from Hv1200 to Hv1300.
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