ЕКСПЕРИМЕНТАЛЬНЕ ДОСЛІДЖЕННЯ ХАРАКТЕРИСТИК ФОТООПОРІВ

Abstract

The article describes the experimental study of the basic characteristics and parameters of semiconductor photo resistances by students of physics at the Pedagogical University. The study was conducted at a laboratory stand developed, patented and manufactured by us. One of the main components of the professional training of future physics teachers is the formation of skills for organizing and conducting a physical experiment, among them acquiring new knowledge; forming the primary skills of using physical equipment and devices; acquiring the ability to plan the experiment and analyze the results. Our studies have shown that performing only laboratory work according to the prepared instructions, do not yet provide adequate preparation for independent planning and conducting experimental research by students. In order to partially solve the problem of improvement the forms and methods of organizing the initial experiment, we have proposed a pilot work that can be done in the final stage of specialist training. The purpose of the article is to analyze the results of the study of the photographic resistance characteristics that was offered to students. Studies in which was used photoresist, based on sulfur cadmium included: taking of current voltage, light, spectral and frequency characteristics of photo-resists; determination of integral sensitivity of photo-resistance; determining the influence of external factors on the characteristics of semiconductors. Students studied photographic resistance before and after treatment of its working surface with high-energy electron fluxes with a maximum energy of up to 1.15 MeV to identify the influence of external factors on the characteristics and parameters of semiconductors. The semiconductor was irradiated with electrons on an industrial electron accelerator. Involvement of students in experimental work conducted during extracurricular time and under the guidance of the teacher is essential in generalizing generic experimental research skills of future specialists. Key words: physical experiment, semiconductor, photo-resistance, properties.