Abstract
A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si// Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over , which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of , and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of .
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