Abstract
Nitrogenized gadolinium Gd(N) thin films were investigated from the stand point of the magneto-volume effect of Gd. Samples were prepared by an ion beam sputtering (LB.S.) method on a MgO(001)single crystal with a Ti buffer layer. The preferred growth direction and the lattice parameters of the samples were estimated from the results of X-ray analysis. The hcp structure is maintained for Gd(N) films with less than 9.2 at%N. The preferred growth direction is hcp(0001). The nitrogen is considered to occupy the interstitial position in the hcp Gd structure. The atomic volume of Gd decreased with increasing composition of N. Measurement of the magnetizations of these samples shows that both the saturation magnetization and the Curie temperature decrease with decreasing atomic volume of Gd, that is, with increasing N composition. The decrease in Tc is comparable with the result for the pressure dependence of Tc.
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