Abstract
The frequency dependences of the real (ε) and imaginary (ε ″) components of the complex dielectric constant, tangent of dielectric loss (tan) and ac conductivity (σac) of the obtained TlIn1-хErхS2 (0 x 0.01) crystals have been studied in the frequency range f = 5104–3.5107 Hz. It is established that in TlIn1-хErхS2 a relaxation dispersion of ε and ε″ takes place. The effect of erbium concentration (Er) in TlIn1-хErхS2 crystals on their dielectric coefficients was studied. In the high frequency range, the ac conductivity of TlIn1-хErхS2 crystals obeyed the σac ~ f 0.8 law, which is characteristic of a hopping charge transfer mechanism at states localized near the Fermi level. The parameters of states localized in the band gap and the influence of the chemical composition of the TlIn1-хErхS2 crystals on these parameters are estimated.
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