Abstract
Using experimental data, as well as using theoretical calculations, the results of studies of the composition of melt solutions (Sn + Ge + Si, Ga + Ge + Si) from temperature conditions are presented. Single-crystal films of a graded-gap solid solution Si1-xGex (0<x<1) on Si <111> substrates were obtained by liquid-phase epitaxy from a limited tin, gallium solution-melt. Optimal technological growth modes are found for obtaining crystalline perfect epitaxial layers and structures.
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