Состав и морфология поверхности Si(111) с поверхностной пленкой SiO-=SUB=-2-=/SUB=- разной толщины

Abstract

In this work, the composition, morphology, and electronic structure of SiO2 nanofilms of various thicknesses, created by thermal oxidation on the Si(111) surface, have been studied. It is shown that up to a thickness of 30–40 Å, the film has an island character. At d ≥ 60 Å, a homogeneous continuously film of SiO2 is formed and the stoichiometric surface roughness of which does not exceed 1.5 - 2 nm. Regardless of the film thickness of the SiO2 appreciable interdiffusion of atoms at the interface SiO2-Si not observed. The regularities of the change in the composition, the degree of surface coverage, and the energy of plasma oscillations with a change in the thickness of the SiO2/Si(111) films in the range from 20 to 120 Å have been determined.