Abstract
A CA (Closed Anode) bias sputtering method to bombard the substrate effectively and to widen the current region of the stable sputtering was developed. This region was determined by the floating potential of the substrate holder. The lower limit of sputtering current for the stable sputtering was advanced to 1/2 1/5 times that of usual diode sputtering. The Ta2N films obtained showed a clear plateau and good stability. The films can be used for high reliable resistors.
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